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G50N03D5

Goford Semiconductor

Product No:

G50N03D5

Manufacturer:

Goford Semiconductor

Package:

8-DFN (4.9x5.75)

Batch:

-

Datasheet:

-

Description:

N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 5000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.5795

    $0.5795

  • 10

    $0.49875

    $4.9875

  • 100

    $0.34542

    $34.542

  • 500

    $0.28861

    $144.305

  • 1000

    $0.245632

    $245.632

  • 2000

    $0.218766

    $437.532

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1784 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 38.4 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.5mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.4V @ 250µA
Supplier Device Package 8-DFN (4.9x5.75)
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 20W (Tc)
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)

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