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G630J

Goford Semiconductor

Product No:

G630J

Manufacturer:

Goford Semiconductor

Package:

TO-251

Batch:

Datasheet:

Description:

N200V, 9A,RD<0.28@10V,VTH1.0V~3.

Quantity:

Delivery:

Payment:

In Stock : 732

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.76

$0.76
10

$0.65455

$6.5455
100

$0.45334

$45.334
500

$0.378803

$189.4015
1000

$0.322392

$322.392
2000

$0.287128

$574.256
5000

$0.272023

$1360.115
10000

$0.251874

$2518.74

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	509 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	11.8 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	280mOhm @ 4.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	TO-251
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	83W (Tc)
Series	G
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube