Home / Single FETs, MOSFETs / G65P06D5

G65P06D5

Goford Semiconductor

Product No:

G65P06D5

Manufacturer:

Goford Semiconductor

Package:

8-DFN (4.9x5.75)

Batch:

Datasheet:

Description:

P60V,RD(MAX)<18M@-10V,VTH-2V~-3V

Quantity:

Delivery:

Payment:

In Stock : 6697

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.0735

$1.0735
10

$0.88065

$8.8065
100

$0.685045

$68.5045
500

$0.580697

$290.3485
1000

$0.473034

$473.034
2000

$0.445303

$890.606

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for G65P06D5, please feel free to contact us. To facilitate the processing of your inquiry, kindly include G65P06D5 and the required quantity in your RFQ. IICSEMI provides the latest quote for G65P06D5 without requiring registration. Latest information on G65P06D5: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs G65P06D5 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	5814 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	18mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 250µA
Supplier Device Package	8-DFN (4.9x5.75)
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	130W (Tc)
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)