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G65P06F

Goford Semiconductor

Product No:

G65P06F

Manufacturer:

Goford Semiconductor

Package:

TO-220F

Batch:

Datasheet:

Description:

P-CH, -60V, 65A, RD(MAX)<18M@-10

Quantity:

Delivery:

Payment:

In Stock : 196

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.0925

$1.0925
10

$0.8911

$8.911
100

$0.69312

$69.312
500

$0.587518

$293.759
1000

$0.4786

$478.6
2000

$0.450547

$901.094
5000

$0.429086

$2145.43
10000

$0.409288

$4092.88

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	6477 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	18mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 250µA
Supplier Device Package	TO-220F
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	39W (Tc)
Series	-
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	65A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube