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G6P06

Goford Semiconductor

Product No:

G6P06

Manufacturer:

Goford Semiconductor

Package:

8-SOP

Batch:

-

Datasheet:

-

Description:

P60V,RD(MAX)<96M@-10V,RD(MAX)<14

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 930 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 96mOhm @ 4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package 8-SOP
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 4.1W (Tc)
Series -
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)

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