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G75P04FI

Goford Semiconductor

Product No:

G75P04FI

Manufacturer:

Goford Semiconductor

Package:

TO-220F

Batch:

Datasheet:

Description:

P-40V,-60A,RD(MAX)<7M@-10V,VTH-1

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	6275 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	106 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	7mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-220F
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	89W (Tc)
Series	-
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube