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GT013N04TI

Goford Semiconductor

Product No:

GT013N04TI

Manufacturer:

Goford Semiconductor

Package:

TO-220

Batch:

Datasheet:

Description:

N40V, 220A,RD<2.5M@10V,VTH2.0V~5

Quantity:

Delivery:

Payment:

In Stock : 76

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.406

$1.406
10

$1.15045

$11.5045
100

$0.894995

$89.4995
500

$0.758651

$379.3255
1000

$0.618004

$618.004
2000

$0.58178

$1163.56
5000

$0.554068

$2770.34
10000

$0.528504

$5285.04

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3986 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.5mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	90W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	220A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube