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GT045N10D5

Goford Semiconductor

Product No:

GT045N10D5

Manufacturer:

Goford Semiconductor

Package:

8-DFN (4.9x5.75)

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Datasheet:

Description:

MOSFET N-CH 100V 120A DFN5*6-8L

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Parameter Info

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4217 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	8-DFN (4.9x5.75)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	180W (Tc)
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)