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GT060N04D3

Goford Semiconductor

Product No:

GT060N04D3

Manufacturer:

Goford Semiconductor

Package:

8-DFN (3.15x3.05)

Batch:

-

Datasheet:

-

Description:

N40V,RD(MAX)<6.5M@10V,RD(MAX)<10

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 13575

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.627

    $0.627

  • 10

    $0.5453

    $5.453

  • 100

    $0.377815

    $37.7815

  • 500

    $0.315666

    $157.833

  • 1000

    $0.26866

    $268.66

  • 2000

    $0.239276

    $478.552

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1282 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6.5mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-DFN (3.15x3.05)
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 36W (Tc)
Series -
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)

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