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GT060N04D5

Goford Semiconductor

Product No:

GT060N04D5

Manufacturer:

Goford Semiconductor

Package:

8-DFN (4.9x5.75)

Batch:

-

Datasheet:

pdf.png

Description:

N40V,120A,RD<2.8M@10V,VTH1.0V~2.

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 5000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.5985

    $0.5985

  • 10

    $0.5168

    $5.168

  • 100

    $0.357485

    $35.7485

  • 500

    $0.298718

    $149.359

  • 1000

    $0.25423

    $254.23

  • 2000

    $0.226423

    $452.846

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for GT060N04D5, please feel free to contact us. To facilitate the processing of your inquiry, kindly include GT060N04D5 and the required quantity in your RFQ. IICSEMI provides the latest quote for GT060N04D5 without requiring registration. Latest information on GT060N04D5: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs GT060N04D5 latest information:#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1276 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 5.5mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.3V @ 250µA
Supplier Device Package 8-DFN (4.9x5.75)
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 39W (Tc)
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 62A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)

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