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GT088N06T

Goford Semiconductor

Product No:

GT088N06T

Manufacturer:

Goford Semiconductor

Package:

TO-220

Batch:

Datasheet:

Description:

N60V,RD(MAX)<9M@10V,RD(MAX)<13M@

Quantity:

Delivery:

Payment:

In Stock : 43

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.931

$0.931
10

$0.7638

$7.638
100

$0.594415

$59.4415
500

$0.503842

$251.921
1000

$0.410428

$410.428
2000

$0.386365

$772.73
5000

$0.367973

$1839.865
10000

$0.350987

$3509.87

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1620 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	9mOhm @ 14A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	75W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube