Home / Single FETs, MOSFETs / GT095N10K

GT095N10K

Goford Semiconductor

Product No:

GT095N10K

Manufacturer:

Goford Semiconductor

Package:

TO-252

Batch:

Datasheet:

Description:

N100V, RD(MAX)<10.5M@10V,RD(MAX)

Quantity:

Delivery:

Payment:

In Stock : 3935

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.045

$1.045
10

$0.855

$8.55
100

$0.664905

$66.4905
500

$0.563616

$281.808
1000

$0.459116

$459.116

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1667 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10.5mOhm @ 35A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-252
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	74W (Tc)
Series	GT
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	55A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)