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GT1003A

Goford Semiconductor

Product No:

GT1003A

Manufacturer:

Goford Semiconductor

Package:

SOT-23-3

Batch:

Datasheet:

Description:

N100V, 3A,RD<140M@10V,VTH1.0V~3.

Quantity:

Delivery:

Payment:

In Stock : 2950

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.3895

$0.3895
10

$0.2755

$2.755
100

$0.13908

$13.908
500

$0.123291

$61.6455
1000

$0.09595

$95.95

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	206 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	4.3 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	140mOhm @ 3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	SOT-23-3
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	1.6W (Ta)
Series	GT
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)