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GT1003D

Goford Semiconductor

Product No:

GT1003D

Manufacturer:

Goford Semiconductor

Package:

SOT-23-3L

Batch:

Datasheet:

Description:

N100V,RD(MAX)<130M@10V,RD(MAX)<1

Quantity:

Delivery:

Payment:

In Stock : 4705

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.4275

$0.4275
10

$0.2983

$2.983
100

$0.150765

$15.0765
500

$0.123025

$61.5125
1000

$0.091276

$91.276

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	212 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	5.2 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	130mOhm @ 3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.6V @ 250µA
Supplier Device Package	SOT-23-3L
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	2W
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3A
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Package	Tape & Reel (TR)