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GT52N10D5

Goford Semiconductor

Product No:

GT52N10D5

Manufacturer:

Goford Semiconductor

Package:

8-DFN (5.2x5.86)

Batch:

Datasheet:

Description:

N100V,RD(MAX)<7.5M@10V,RD(MAX)<1

Quantity:

Delivery:

Payment:

In Stock : 15080

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.425

$1.425
10

$1.1875

$11.875
100

$0.94487

$94.487
500

$0.799501

$399.7505
1000

$0.678366

$678.366
2000

$0.644452

$1288.904

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2626 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	44.5 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	7.5mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-DFN (5.2x5.86)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	79W (Tc)
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	71A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)