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GT55N06D5

Goford Semiconductor

Product No:

GT55N06D5

Manufacturer:

Goford Semiconductor

Package:

8-DFN (4.9x5.75)

Batch:

Datasheet:

Description:

N60V,RD(MAX)<8M@10V,RD(MAX)<13M@

Quantity:

Delivery:

Payment:

In Stock : 5001

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.76

$0.76
10

$0.6555

$6.555
100

$0.45372

$45.372
500

$0.379088

$189.544
1000

$0.32262

$322.62
2000

$0.287337

$574.674

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1988 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	9mOhm @ 14A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-DFN (4.9x5.75)
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	70W (Ta)
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	53A (Ta)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)