GT40QR21(STA1,E,D
Toshiba Semiconductor and Storage
Product No:
GT40QR21(STA1,E,D
Manufacturer:
Package:
TO-3P(N)
Batch:
-
Datasheet:
-
Description:
DISCRETE IGBT TRANSISTOR TO-3PN(
Quantity:
Delivery:
Payment:
In Stock : 18
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.3725
$3.3725
10
$2.8329
$28.329
100
$2.291875
$229.1875
500
$2.037218
$1018.609
1000
$1.744362
$1744.362
2000
$1.642502
$3285.004
5000
$1.575812
$7879.06
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Product Information
Parameter Info
User Guide
| Operating Temperature | 175°C (TJ) |
| Input Type | Standard |
| Test Condition | 280V, 40A, 10Ohm, 20V |
| Reverse Recovery Time (trr) | 600 ns |
| Switching Energy | -, 290µJ (off) |
| Current - Collector (Ic) (Max) | 40 A |
| Mounting Type | Through Hole |
| Product Status | Active |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Td (on/off) @ 25°C | - |
| Supplier Device Package | TO-3P(N) |
| Current - Collector Pulsed (Icm) | 80 A |
| Series | - |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 40A |
| Package / Case | TO-3P-3, SC-65-3 |
| Power - Max | 230 W |
| Mfr | Toshiba Semiconductor and Storage |
| Package | Tube |
| IGBT Type | - |
| Base Product Number | GT40QR21 |
GT40QR21(STA1,E,D Tags
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