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GT30J121(Q)

Toshiba Semiconductor and Storage

Product No:

GT30J121(Q)

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-3P(N)

Batch:

Datasheet:

Description:

IGBT 600V 30A 170W TO3PN

Quantity:

Delivery:

Payment:

In Stock : 89

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$3.1065

$3.1065
10

$2.78635

$27.8635
25

$2.63378

$65.8445
100

$2.28266

$228.266
300

$2.165592

$649.6776
500

$1.943187

$971.5935
1000

$1.638826

$1638.826
2400

$1.556888

$3736.5312
4900

$1.498359

$7341.9591

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Product Information

Parameter Info

User Guide

Input Type	Standard
Test Condition	300V, 30A, 24Ohm, 15V
Switching Energy	1mJ (on), 800µJ (off)
Current - Collector (Ic) (Max)	30 A
Mounting Type	Through Hole
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	600 V
Td (on/off) @ 25°C	90ns/300ns
Supplier Device Package	TO-3P(N)
Current - Collector Pulsed (Icm)	60 A
Series	-
Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 30A
Package / Case	TO-3P-3, SC-65-3
Power - Max	170 W
Mfr	Toshiba Semiconductor and Storage
Package	Tube
IGBT Type	-
Base Product Number	GT30J121