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GT60N321(Q)

Toshiba Semiconductor and Storage

Product No:

GT60N321(Q)

Package:

TO-3P(LH)

Batch:

-

Datasheet:

-

Description:

IGBT 1000V 60A 170W TO3P LH

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
Input Type Standard
Test Condition -
Reverse Recovery Time (trr) 2.5 µs
Switching Energy -
Current - Collector (Ic) (Max) 60 A
Mounting Type Through Hole
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 1000 V
Td (on/off) @ 25°C 330ns/700ns
Supplier Device Package TO-3P(LH)
Current - Collector Pulsed (Icm) 120 A
Series -
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 60A
Package / Case TO-3PL
Power - Max 170 W
Mfr Toshiba Semiconductor and Storage
Package Tube
IGBT Type -
Base Product Number GT60N321

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