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GT15J341,S4X

Toshiba Semiconductor and Storage

Product No:

GT15J341,S4X

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220SIS

Batch:

Datasheet:

Description:

PB-F DISCRETE IGBT TRANSISTOR TO

Quantity:

Delivery:

Payment:

In Stock : 50

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.691

$1.691
10

$1.40125

$14.0125
100

$1.11511

$111.511
500

$0.943578

$471.789
1000

$0.800603

$800.603
2000

$0.76058

$1521.16
5000

$0.731984

$3659.92
10000

$0.70775

$7077.5

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
Input Type	Standard
Test Condition	300V, 15A, 33Ohm, 15V
Reverse Recovery Time (trr)	80 ns
Switching Energy	300µJ (on), 300µJ (off)
Current - Collector (Ic) (Max)	15 A
Mounting Type	Through Hole
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	600 V
Td (on/off) @ 25°C	60ns/170ns
Supplier Device Package	TO-220SIS
Current - Collector Pulsed (Icm)	60 A
Series	-
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 15A
Package / Case	TO-220-3 Full Pack
Power - Max	30 W
Mfr	Toshiba Semiconductor and Storage
Package	Tube
IGBT Type	-