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GT10J312(Q)

Toshiba Semiconductor and Storage

Product No:

GT10J312(Q)

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220SM

Batch:

Datasheet:

Description:

IGBT 600V 10A 60W TO220SM

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
Input Type	Standard
Test Condition	300V, 10A, 100Ohm, 15V
Reverse Recovery Time (trr)	200 ns
Switching Energy	-
Current - Collector (Ic) (Max)	10 A
Mounting Type	Surface Mount
Product Status	Obsolete
Voltage - Collector Emitter Breakdown (Max)	600 V
Td (on/off) @ 25°C	400ns/400ns
Supplier Device Package	TO-220SM
Current - Collector Pulsed (Icm)	20 A
Series	-
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 10A
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Power - Max	60 W
Mfr	Toshiba Semiconductor and Storage
Package	Tube
IGBT Type	-
Base Product Number	GT10J312