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GT30J65MRB,S1E

Toshiba Semiconductor and Storage

Product No:

GT30J65MRB,S1E

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-3P(N)

Batch:

Datasheet:

Description:

650V SILICON N-CHANNEL IGBT, TO-

Quantity:

Delivery:

Payment:

In Stock : 61

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.4035

$2.4035
10

$1.99785

$19.9785
100

$1.590395

$159.0395
500

$1.345694

$672.847
1000

$1.141805

$1141.805
2000

$1.08472

$2169.44
5000

$1.043936

$5219.68

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Product Information

Parameter Info

User Guide

Operating Temperature	175°C (TJ)
Input Type	Standard
Test Condition	400V, 15A, 56Ohm, 15V
Reverse Recovery Time (trr)	200 ns
Switching Energy	1.4mJ (on), 220µJ (off)
Current - Collector (Ic) (Max)	60 A
Mounting Type	Through Hole
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	650 V
Td (on/off) @ 25°C	75ns/400ns
Supplier Device Package	TO-3P(N)
Series	-
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 30A
Package / Case	TO-3P-3, SC-65-3
Gate Charge	70 nC
Power - Max	200 W
Mfr	Toshiba Semiconductor and Storage
Package	Tube
IGBT Type	-
Base Product Number	GT30J65