Home / Single IGBTs / GT20N135SRA,S1E

GT20N135SRA,S1E

Toshiba Semiconductor and Storage

Product No:

GT20N135SRA,S1E

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-247

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Datasheet:

Description:

D-IGBT TO-247 VCES=1350V IC=40A

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Product Information

Parameter Info

User Guide

Operating Temperature	175°C (TJ)
Input Type	Standard
Test Condition	300V, 40A, 39Ohm, 15V
Switching Energy	-, 700µJ (off)
Current - Collector (Ic) (Max)	40 A
Mounting Type	Through Hole
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	1350 V
Td (on/off) @ 25°C	-
Supplier Device Package	TO-247
Current - Collector Pulsed (Icm)	80 A
Series	-
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 40A
Package / Case	TO-247-3
Gate Charge	185 nC
Power - Max	312 W
Mfr	Toshiba Semiconductor and Storage
Package	Tube
IGBT Type	-