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GT50J341,Q

Toshiba Semiconductor and Storage

Product No:

GT50J341,Q

Package:

TO-3P(N)

Batch:

-

Datasheet:

-

Description:

PB-F IGBT / TRANSISTOR TO-3PN IC

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C (TJ)
Input Type Standard
Test Condition -
Switching Energy -
Current - Collector (Ic) (Max) 50 A
Mounting Type Through Hole
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 600 V
Td (on/off) @ 25°C -
Supplier Device Package TO-3P(N)
Current - Collector Pulsed (Icm) 100 A
Series -
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A
Package / Case TO-3P-3, SC-65-3
Power - Max 200 W
Mfr Toshiba Semiconductor and Storage
Package Tube
IGBT Type -

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