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GCMS080B120S1-E1

SemiQ

Product No:

GCMS080B120S1-E1

Manufacturer:

SemiQ

Package:

SOT-227

Batch:

Datasheet:

Description:

SIC 1200V 80M MOSFET & 10A SBD S

Quantity:

Delivery:

Payment:

In Stock : 50

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$23.503

$23.503
10

$20.88195

$208.8195
100

$18.26413

$1826.413
500

$15.585358

$7792.679

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1374 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 20 V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 10mA
Supplier Device Package	SOT-227
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	142W (Tc)
Series	-
Package / Case	SOT-227-4, miniBLOC
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Mfr	SemiQ
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Base Product Number	GCMS080