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GP2T080A120U

SemiQ

Product No:

GP2T080A120U

Manufacturer:

SemiQ

Package:

TO-247-3

Batch:

-

Datasheet:

pdf.png

Description:

SIC MOSFET 1200V 80M TO-247-3L

Quantity:

Delivery:

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Payment:

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In Stock : 1449

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $10.849

    $10.849

  • 10

    $9.29765

    $92.9765

  • 100

    $7.74801

    $774.801

  • 500

    $6.836428

    $3418.214

  • 1000

    $6.152789

    $6152.789

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for GP2T080A120U, please feel free to contact us. To facilitate the processing of your inquiry, kindly include GP2T080A120U and the required quantity in your RFQ. IICSEMI provides the latest quote for GP2T080A120U without requiring registration. Latest information on GP2T080A120U: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs GP2T080A120U latest information:#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1377 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 20 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 10mA
Supplier Device Package TO-247-3
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 188W (Tc)
Series -
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Mfr SemiQ
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube
Base Product Number GP2T080A

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