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GP2T080A120H

SemiQ

Product No:

GP2T080A120H

Manufacturer:

SemiQ

Package:

TO-247-4

Batch:

Datasheet:

Description:

SIC MOSFET 1200V 80M TO-247-4L

Quantity:

Delivery:

Payment:

In Stock : 55

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$10.1365

$10.1365
10

$8.92905

$89.2905
100

$7.722075

$772.2075
500

$6.998118

$3499.059
1000

$6.41896

$6418.96

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1377 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs	61 nC @ 20 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 10mA
Supplier Device Package	TO-247-4
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	188W (Tc)
Series	-
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Mfr	SemiQ
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Base Product Number	GP2T080A