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GP2T040A120U

SemiQ

Product No:

GP2T040A120U

Manufacturer:

SemiQ

Package:

TO-247-3

Batch:

-

Datasheet:

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Description:

SIC MOSFET 1200V 40M TO-247-3L

Quantity:

Delivery:

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Payment:

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In Stock : 39

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $19.038

    $19.038

  • 10

    $16.77415

    $167.7415

  • 100

    $14.50764

    $1450.764

  • 500

    $13.147544

    $6573.772

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for GP2T040A120U, please feel free to contact us. To facilitate the processing of your inquiry, kindly include GP2T040A120U and the required quantity in your RFQ. IICSEMI provides the latest quote for GP2T040A120U without requiring registration. Latest information on GP2T040A120U: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs GP2T040A120U latest information:#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3192 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs 118 nC @ 20 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 52mOhm @ 40A, 20V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 10mA
Supplier Device Package TO-247-3
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 322W (Tc)
Series -
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 63A (Tc)
Mfr SemiQ
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube

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