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GCMX080B120S1-E1

SemiQ

Product No:

GCMX080B120S1-E1

Manufacturer:

SemiQ

Package:

SOT-227

Batch:

Datasheet:

Description:

SIC 1200V 80M MOSFET SOT-227

Quantity:

Delivery:

Payment:

In Stock : 35

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$21.109

$21.109
10

$18.75965

$187.5965
100

$16.40745

$1640.745
500

$14.001024

$7000.512

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1336 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 20 V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 10mA
Supplier Device Package	SOT-227
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	142W (Tc)
Series	-
Package / Case	SOT-227-4, miniBLOC
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Mfr	SemiQ
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Base Product Number	GCMX080