Home / Single FETs, MOSFETs / GCMX040B120S1-E1

GCMX040B120S1-E1

SemiQ

Product No:

GCMX040B120S1-E1

Manufacturer:

SemiQ

Package:

SOT-227

Batch:

Datasheet:

Description:

SIC 1200V 40M MOSFET SOT-227

Quantity:

Delivery:

Payment:

In Stock : 8

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$26.8185

$26.8185
10

$23.8279

$238.279
100

$20.84034

$2084.034
500

$17.783753

$8891.8765

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for GCMX040B120S1-E1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include GCMX040B120S1-E1 and the required quantity in your RFQ. IICSEMI provides the latest quote for GCMX040B120S1-E1 without requiring registration. Latest information on GCMX040B120S1-E1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs GCMX040B120S1-E1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3185 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs	121 nC @ 20 V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	52mOhm @ 40A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 10mA
Supplier Device Package	SOT-227
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	242W (Tc)
Series	-
Package / Case	SOT-227-4, miniBLOC
Technology	SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C	57A (Tc)
Mfr	SemiQ
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Base Product Number	GCMX040