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GT40WR21,Q

Toshiba Semiconductor and Storage

Product No:

GT40WR21,Q

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-3P(N)

Batch:

Datasheet:

Description:

DISCRETE IGBT TRANSISTOR TO-3PN(

Quantity:

Delivery:

Payment:

In Stock : 100

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$10.2695

$10.2695
10

$8.79795

$87.9795
25

$8.1947

$204.8675
100

$7.332005

$733.2005
300

$6.900734

$2070.2202
500

$6.469424

$3234.712
1000

$5.822484

$5822.484

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Product Information

Parameter Info

User Guide

Operating Temperature	175°C (TJ)
Input Type	Standard
Test Condition	-
Switching Energy	-
Current - Collector (Ic) (Max)	40 A
Mounting Type	Through Hole
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	1350 V
Td (on/off) @ 25°C	-
Supplier Device Package	TO-3P(N)
Current - Collector Pulsed (Icm)	80 A
Series	-
Vce(on) (Max) @ Vge, Ic	5.9V @ 15V, 40A
Package / Case	TO-3P-3, SC-65-3
Power - Max	375 W
Mfr	Toshiba Semiconductor and Storage
Package	Tray
IGBT Type	-