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GT50JR21(STA1,E,S)

Toshiba Semiconductor and Storage

Product No:

GT50JR21(STA1,E,S)

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-3P(N)

Batch:

Datasheet:

Description:

PB-F IGBT / TRANSISTOR TO-3PN(OS

Quantity:

Delivery:

Payment:

In Stock : 23

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$4.465

$4.465
10

$3.7487

$37.487
100

$3.03278

$303.278
500

$2.695815

$1347.9075
1000

$2.308291

$2308.291
2000

$2.173496

$4346.992

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Product Information

Parameter Info

User Guide

Operating Temperature	175°C (TJ)
Input Type	Standard
Test Condition	-
Switching Energy	-
Current - Collector (Ic) (Max)	50 A
Mounting Type	Through Hole
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	600 V
Td (on/off) @ 25°C	-
Supplier Device Package	TO-3P(N)
Current - Collector Pulsed (Icm)	100 A
Series	-
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 50A
Package / Case	TO-3P-3, SC-65-3
Power - Max	230 W
Mfr	Toshiba Semiconductor and Storage
Package	Tube
IGBT Type	-