GT50JR21(STA1,E,S)
Toshiba Semiconductor and Storage
Product No:
GT50JR21(STA1,E,S)
Manufacturer:
Package:
TO-3P(N)
Batch:
-
Datasheet:
-
Description:
PB-F IGBT / TRANSISTOR TO-3PN(OS
Quantity:
Delivery:
Payment:
In Stock : 23
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$4.465
$4.465
10
$3.7487
$37.487
100
$3.03278
$303.278
500
$2.695815
$1347.9075
1000
$2.308291
$2308.291
2000
$2.173496
$4346.992
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Product Information
Parameter Info
User Guide
| Operating Temperature | 175°C (TJ) |
| Input Type | Standard |
| Test Condition | - |
| Switching Energy | - |
| Current - Collector (Ic) (Max) | 50 A |
| Mounting Type | Through Hole |
| Product Status | Active |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Td (on/off) @ 25°C | - |
| Supplier Device Package | TO-3P(N) |
| Current - Collector Pulsed (Icm) | 100 A |
| Series | - |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 50A |
| Package / Case | TO-3P-3, SC-65-3 |
| Power - Max | 230 W |
| Mfr | Toshiba Semiconductor and Storage |
| Package | Tube |
| IGBT Type | - |
GT50JR21(STA1,E,S) Tags
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15,000 ㎡In-stock Warehouse
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